Transistor, Field Effect, N-Channel Radiation Hardened, Encapsulated (Surface Mount and Carrier Board Packages), Type 2N7467, JANTXVR, F, G, and H and JANSR, F, G, and H

Published by	Publication Date	Number of Pages
MIL	04/03/2015	1

Category: MIL

Description

MIL MIL-PRF-19500/683D Notice 1 – Validation – Transistor, Field Effect, N-Channel Radiation Hardened, Encapsulated (Surface Mount and Carrier Board Packages), Type 2N7467, JANTXVR, F, G, and H and JANSR, F, G, and H

This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device. Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G”and “H”) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.