MIL MIL-PRF-19500/687B Notice 1 – Validation

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Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R

Published by Publication Date Number of Pages
MIL 08/13/2013 1
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Description

MIL MIL-PRF-19500/687B Notice 1 – Validation – Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R

This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to two radiation levels (‰ÛÏD‰Û and ‰ÛÏR‰Û) are provided for JANTXV and JANS product assurance levels.

Product Details

Published:
08/13/2013
Number of Pages:
1
File Size:
1 file , 35 KB
Note:
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